Effects of 30 MEV electron irradation on InGaAsp LEDS and InGaAs photodiodes
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Effects of 30 MEV electron irradation on InGaAsp LEDS and InGaAs photodiodes by Patrick J. O"Reilly

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Published .
Written in English

Subjects:

  • Physics

Book details:

The Physical Object
Pagination190 p.
Number of Pages190
ID Numbers
Open LibraryOL25519187M

Download Effects of 30 MEV electron irradation on InGaAsp LEDS and InGaAs photodiodes

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  InGaAsP LEDs and InGaAs photodiodes were irradiated with a 30 MEV electron beam. The rate of performance degradation were studied. Simple models for LED and photodiode current controlling mechanisms and for a phenomenological radiation damage constant are : Patrick J O'Reilly. The effect of 30 MeV electron irradiWon op InGaA LEDs and InGaAs photodiodes was studied. Electron fluxes ranged from 10 12 e/cm 2 to 10 15 e/cm 2. The beam profile was measured with an improved scanning wire technique. During irradiation, light output, total current, and temperature were monitored for the LEDs. InGaAsP LEDs and InGaAs photodiodes were irradiated with a 30 Mev electron beam. The rate of performance degradation and the effects of the increase in temperature during irradiations were studied. Simple models for LED and photodiode current controlling mechanisms and for a phenomenological radiation damage constant are presented. TheAuthor: Patrick J O'Reilly. High Temperature Electron Irradiation Effects in InGaAs Photodiodes p Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range.

PDF | On Dec 1, , Xiaofan Zhao and others published 1-MeV electron irradiation effects on InGaAsP/InGaAs double-junction solar cell and its component subcells | Find, read and cite all the. Figure 1 (a) Schematic cross-section of the device structure, (b) Simulated trajectory of electron beam across material using CASINO, (c) Normalized Voc as a function of electron fluence and displacement damage dose (d) Dark I-V curves before and after irradiation, (e) and (f) External Quantum Efficiency of InGaAsP/InGaAs double-junction and.   The experimental results of a 10 MeV proton irradiation on concentrator GaInP/GaAs/Ge lattice-matched triple-junction solar cells and their corresponding component subcells are examined. The analysis has been performed by means of in-situ and ex-situ electrical and optical characterization such as external quantum efficiency, dark and light I-V. GaAs solar cells hold the record for the highest single band-gap cell efficiency. Successful application of these cells in advanced space-borne systems demand characterization of cell properties like dark current under different ambient conditions and the stability of the cells against particle irradiation in space. In this paper, the results of the studies carried out on the effect of 8 MeV.

  The effect of 1 MeV electron irradiation on the figures of merit of the n + –p–p + Si solar cell under AM0, extracted from the calculated J–V characteristics (Fig. 1a) and normalized to the pre-irradiated value, taking into account all acceptor traps and the shallower donor trap (E C − eV). Irradiation damage in InGaAs p-i-n photodiodes by 1-MeV fast neutrons is studied as a function of fluence for the first time. The electron irradiation effects on the current voltage, light output versus forward bias current and bias voltage characteristics of the LEDs are studied. A thermal annealing study also carried out on the irradiated LEDs having metal package. Keywords: LEDs, electron irradiation, GaAs, GaN, InGaN, Current voltage characteristics.   We studied 10 MeV electron irradiation effects in a group of n-GaN films grown by standard metalorganic chemical vapor deposition (MOCVD) and by epitaxial lateral overgrowth (ELOG) techniques. The samples were either undoped or Si-doped, so that the shallow donor concentrations ranged from cm−3 to 3 × cm−3. It was found that electron irradiation led to the .